Advances in Chemical-Mechanical Planarization

被引:0
|
作者
Rajiv K. Singh
Rajeev Bajaj
机构
来源
MRS Bulletin | 2002年 / 27卷
关键词
chemical-mechanical planarization; chemical-mechanical polishing; CMP; copper interconnects; low-κ dielectrics; nanotopography; shallow trench isolation; silica polishing; slurry design;
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摘要
The primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical-mechanical planarization (CMP), also known as chemical-mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field.Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer-pad-slurry interactions, process integration issues, the formulation of abrasivefree slurries for copper polishing, understanding surface topography issues in shallow trench isolation, and emerging applications.
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页码:743 / 751
页数:8
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