Tunable resistance switching in solution processed chromium-doped strontium titanate nanoparticles films

被引：16
|
作者：
Wan, Tao [1 ]
Qu, Bo [1 ]
Du, Haiwei [1 ]
Lin, Xi [1 ]
Guan, Peiyuan [1 ]
Lin, Qianru [1 ]
Chen, Nan [1 ]
Tan, Thiam Teck [1 ]
Hang, Tao [2 ]
Chu, Dewei [1 ]
机构：
[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Key Lab Thin Film & Microfabricat,Minist Educ, Shanghai, Peoples R China
来源：
JOURNAL OF COLLOID AND INTERFACE SCIENCE | 2017年 / 494卷
基金：
澳大利亚研究理事会;
关键词：
Resistance switching; Solution processed; Cr-doped SrTiO3; Oxygen vacancies; THIN-FILMS; PHOTOCATALYTIC PROPERTIES; HYDROTHERMAL SYNTHESIS; SRTIO3; NANOCUBES; DEFECT CHEMISTRY; LIGHT RESPONSE; OXIDE; SURFACE; NANOIONICS; EVOLUTION;
D O I：
10.1016/j.jcis.2017.01.095
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work, resistance switching behaviours in solution processed chromium (Cr)-doped strontium titanate (SrTiO3) films have been investigated. Undoped SrTiO3 film shows I-V characteristics of typical non-linear resistor and no resistance hysteresis loops are observed. On the contrary, Cr-doped SrTiO3 films show stable and reversible hysteresis loops, which can be controlled by applying different voltage bias. Based on a series of characterization results, including X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS), we infer that TO4+ is substituted by Cr3+, giving rise to increased concentration of oxygen vacancies. Therefore, the observed resistance switching phenomenon is attributed to voltage driven oxygen vacancy migration. Furthermore, gradually decreased overall resistance is also realized under repeated sweeping cycles. (C) 2017 Elsevier Inc. All rights reserved.
引用
收藏
页码：178 / 184
页数：7
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