Magnetoresonant hardening of silicon single crystals

被引：28
|
作者：
Ossipyan, YA [1 ]
Morgunov, RB
Baskakov, AA
Orlov, AM
Skvortsov, AA
Inkina, EN
Tanimoto, Y
机构：
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia
[2] Ulyanovsk State Univ, Ulyanovsk 432970, Russia
[3] Inst Mol Sci, Okazaki, Aichi 4448585, Japan
来源：
JETP LETTERS | 2004年 / 79卷 / 03期
关键词：
D O I：
10.1134/1.1719128
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A microwave magnetic field crossed with a static field was found to exert a resonance effect on the dislocation mobility in single crystals of p-type silicon. The frequency of alternating field and the magnitude of static magnetic field corresponding to the maximal crystal hardening satisfy conditions for EPR of structural defects. This is evidence that the primary elementary processes observed previously in magnetoplasticity effects (influence of a static magnetic field on plasticity) are spin-dependent in silicon crystals. The dislocation path detected EPR spectrum was found to be anisotropic. (C) 2004 MAIK "Nauka / Interperiodica".
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页码：126 / 130
页数：5
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