A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs

被引：0
|
作者：
Curtice, WR [1 ]
Pla, JA [1 ]
Bridges, D [1 ]
Liang, T [1 ]
Shumate, EE [1 ]
机构：
[1] WR Curtice Consulting, Washington Crossing, PA 18977 USA
来源：
1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The development and behavior of a new model for Motorola's LDMOS: transistor is described The model includes self-heating effects, produces accurate small-signal simulations as well as large-signal, harmonic-balance simulations and also operates in the transient mode. It is simpler than previous models, yet it accurately predicts mixed signal effects, such as intermodulation distortion.
引用
收藏
页码：419 / 422
页数：4
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