Ion beam lithography for Fresnel zone plates in X-ray microscopy

被引：35

作者：

Keskinbora, Kahraman ^{[1
]}

Grevent, Corinne ^{[1
]}

Bechtel, Michael ^{[1
]}

Weigand, Markus ^{[1
]}

Goering, Eberhard ^{[1
]}

Nadzeyka, Achim ^{[2
]}

Peto, Lloyd ^{[2
]}

Rehbein, Stefan ^{[3
]}

Schneider, Gerd ^{[3
]}

Follath, Rolf ^{[3
]}

Vila-Comamala, Joan ^{[4
]}

Yan, Hanfei ^{[5
]}

Schuetz, Gisela ^{[1
]}

机构：

[1] Max Planck Inst Intelligent Syst, D-70569 Stuttgart, Germany

[2] Raith GmbH, D-44263 Dortmund, Germany

[3] HZB Bessy II, D-12489 Berlin, Germany

[4] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[5] Brookhaven Natl Lab, Natl Synchrotron Light Source 2, Upton, NY 11973 USA

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 10期

关键词：

RESOLVING POWER; HIGH-RESOLUTION; HIGH-EFFICIENCY; FABRICATION; EXPLORATION; SCIENCE; LASER;

D O I：

10.1364/OE.21.011747

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Fresnel Zone Plates (FZP) are to date very successful focusing optics for X-rays. Established methods of fabrication are rather complex and based on electron beam lithography (EBL). Here, we show that ion beam lithography (IBL) may advantageously simplify their preparation. A FZP operable from the extreme UV to the limit of the hard X-ray was prepared and tested from 450 eV to 1500 eV. The trapezoidal profile of the FZP favorably activates its 2nd order focus. The FZP with an outermost zone width of 100 nm allows the visualization of features down to 61, 31 and 21 nm in the 1st, 2nd and 3rd order focus respectively. Measured efficiencies in the 1st and 2nd order of diffraction reach the theoretical predictions. (C) 2013 Optical Society of America

引用

页码：11747 / 11756

页数：10

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