Correlation of nanostructure and charge transport properties of oxidized a-SiC: H films

被引：2
|
作者：
Gordienko, S. O. [1 ]
Nazarov, A. N. [1 ]
Vasin, A. V. [1 ]
Rusavsky, A. V. [1 ]
Lysenko, V. S. [1 ]
机构：
[1] Natl Acad Sci Ukraine, Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6 | 2012年 / 9卷 / 06期
关键词：
a-SiC:H thin films; low-temperature oxidation; graphite inclusions; space charge limited current; SILICON-OXIDE; PHOTOLUMINESCENCE; SIO2;
D O I：
10.1002/pssc.201100790
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper considers the influence of low temperature oxidation on structural and electrical properties of amorphous carbon-rich a-Si1-xCx:H thin films fabricated by reactive RF magnetron sputtering. It is shown that oxidation leads to formation of SiOx matrix with graphite-like carbon inclusions. Such conductive precipitates has a strong effect on charge transport in oxidized a-Si1-xCx:H films. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1477 / 1480
页数：4
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