Effect of Sputtering Gas on Structural and Optical Properties of Sputtered SiC Thin Films

被引：1
|
作者：
Kumar, Mukesh [1 ]
Chandra, Ramesh [1 ]
Mishra, Raghwesh [2 ]
Tiwari, Rajesh K. [2 ]
Saxena, A. K. [2 ]
机构：
[1] Indian Inst Technol, Inst Instrumentat Ctr, Nanosci Lab, Roorkee 247667, UK, India
[2] Div Appl Chem, Def Mat Stores Res, Dev Estab DMSRDE, Kanpur 208013, Uttar Pradesh, India
来源：
INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE & TECHNOLOGY | 2012年 / 1451卷
关键词：
SiC thin films; Magnetron sputtering; Raman spectroscopy; PL spectroscopy; GROWTH; DEPOSITION;
D O I：
10.1063/1.4732434
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the structural and optical properties of nanostructured SiC thin films deposited on Si (100) and glass substrates by RF-magnetron sputtering. The effect of sputtering pressure on these properties has been studied systematically. The formations of SiC as well as carbon clusters were found in the measured Raman spectra. The average roughness of the SiC films increases with increase in the sputtering pressure. The optical band gap of the SiC films measured by UV-Visible spectrophotometer was found to decrease from 2.43 to 2.02 eV with increase in sputtering pressure from 10 to 20 mTorr. The UV-Visible spectroscopy results were in agreement with the data observed by Photoluminescence (PL) spectroscopy.
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页码：260 / 262
页数：3
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