Si single-electron MOS memory with nanoscale floating-gate and narrow channel

被引：12
|
作者：
Guo, LJ
Leobandung, E
Chou, SY
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.554141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：955 / 956
页数：2
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