Modeling the temperature-dependent early voltage of a silicon germanium heterojunction bipolar transistor

被引：1

作者：

Wartenberg, SA ^{[1
]}

Westgate, CR ^{[1
]}

机构：

[1] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 06期

关键词：

device characterization; device modeling; early voltage; heterojunction bipolar transistor; isothermal; pulsed; silicon germanium;

D O I：

10.1109/16.766886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper compares the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor (HBT) to that of a silicon bipolar junction transistor (BJT) fabricated with identical geometry. Derived is an isothermal expression for the forward Early voltage specifically suited to the base composition of a SiGe HBT, The expression includes two fit factors, one for the Si1-xGex alloy and the other for the nonuniform doping density. The fit factors are functions of the device temperature and are determined through pulsed bias measurements.

引用

页码：1207 / 1211

页数：5

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