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- [21] Modeling of Negative Capacitance in Ferroelectric Thin FilmsADVANCED MATERIALS, 2019, 31 (32)Park, Hyeon Woo论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South KoreaRoh, Jangho论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South KoreaLee, Yong Bin论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South KoreaHwang, Cheol Seong论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea
- [22] Domain Formation in Ferroelectric Negative Capacitance Devices2018 76TH DEVICE RESEARCH CONFERENCE (DRC), 2018,Hoffmann, M.论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, GermanySlesazeck, S.论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, GermanyMikolajick, T.论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany Tech Univ Dresden, Chair Nanoelect Mat, D-01069 Dresden, Germany NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany
- [23] Ferroelectric gate oxides for negative capacitance transistorsMRS Bulletin, 2021, 46 : 930 - 937Michael Hoffmann论文数: 0 引用数: 0 h-index: 0机构: University of California,Department of Electrical Engineering and Computer SciencesSayeef Salahuddin论文数: 0 引用数: 0 h-index: 0机构: University of California,Department of Electrical Engineering and Computer Sciences
- [24] Negative capacitance from the inductance of ferroelectric switchingCOMMUNICATIONS PHYSICS, 2019, 2 (1)Cheng, Po-Hsien论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanYin, Yu-Tung论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanTsai, I-Na论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanLu, Chen-Hsuan论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanLi, Lain-Jong论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Mfg Co, Hsinchu, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanPan, Samuel C.论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, TSMC NTU Res Ctr, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanShieh, Jay论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanShiojiri, Makoto论文数: 0 引用数: 0 h-index: 0机构: Kyoto Inst Technol, Kyoto, Japan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, TaiwanChen, Miin-Jang论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan Natl Taiwan Univ, Grad Inst Elect Engn, Taipei, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei, Taiwan
- [25] Negative differential capacitance in ultrathin ferroelectric hafniaNature Electronics, 2023, 6 : 390 - 397Sanghyun Jo论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyHyangsook Lee论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyDuk-Hyun Choe论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyJung-Hwa Kim论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyYun Seong Lee论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyOwoong Kwon论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologySeunggeol Nam论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyYoonsang Park论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyKihong Kim论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyByeong Gyu Chae论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologySangwook Kim论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologySeunghun Kang论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyTaehwan Moon论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyHagyoul Bae论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyJung Yeon Won论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyDong-Jin Yun论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyMyoungho Jeong论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyHyun Hwi Lee论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyYeonchoo Cho论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyKwang-Hee Lee论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyHyun Jae Lee论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologySangjun Lee论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyKab-Jin Nam论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyDongjin Jung论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyBong Jin Kuh论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyDaewon Ha论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyYongsung Kim论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologySeongjun Park论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyYunseok Kim论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyEunha Lee论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyJinseong Heo论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of Technology
- [26] Ferroelectric Negative Capacitance Field Effect TransistorADVANCED ELECTRONIC MATERIALS, 2018, 4 (11):Tu, Luqi论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R ChinaWang, Xudong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R ChinaWang, Jianlu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R ChinaMeng, Xiangjian论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R ChinaChu, Junhao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China
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- [30] A microscopic "toy" model of ferroelectric negative capacitance2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020), 2020,Hoffmann, Michael论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH TU Dresden, Dresden, Germany NaMLab gGmbH TU Dresden, Dresden, GermanyRavindran, Prasanna Venkatesan论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA NaMLab gGmbH TU Dresden, Dresden, GermanyKhan, Asif Islam论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA NaMLab gGmbH TU Dresden, Dresden, Germany