Unified electro-thermal stability criterion for bipolar transistors

被引：33

作者：

Vanhoucke, T ^{[1
]}

Hurkx, GAM ^{[1
]}

机构：

[1] Philips Res Leuven, B-3001 Louvain, Belgium

来源：

Proceedings of the 2005 BIPOLAR/BiCMOS Circuits and Technology Meeting | 2005年

关键词：

avalanche breakdown; bipolar transistors; electrothermal effects; stability criteria;

D O I：

10.1109/BIPOL.2005.1555196

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an unified electro-thermal criterion for quantifying the stability region of bipolar transistors. The criterion can be used for process optimization or circuit design. We propose a new figure-of-merit as the maximum V-CE at which the current at peakf(T) can be applied without electro-thermal runaway.

引用

页码：37 / 40

页数：4

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