GaSb film growth on GaAs substrate by MBE - art. no. 602038

The GaSb characteristics grown by molecular beam epitaxy (MBE) on GaAs substrates was reported. The abruptness of the interfaces, the decyree of intermixine, and the anion incorporation greatly affect the material quality. The RHEED patterns provide information on the surface structure and morphology of the sample and dictate surface reconstruction, accumulation and segregation. The structure parameters of samples are obtained from the rocking curve. The first and second satellite peaks appear around the main Oth-order peak. The experimental and simulated results of samples A and B with x-ray rocking curves show there is a GaAsSb layer because of As-for-Sb exchange at the GaSb/GaAs interface.