Magnetoluminescence of annealed self-organized InGaAs/GaAs quantum dots

被引：0

作者：

Born, H ^{[1
]}

Goñi, AR ^{[1
]}

Heitz, R ^{[1
]}

Hoffmann, A ^{[1
]}

Thomsen, C ^{[1
]}

Heinrichsdorff, F ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1999年 / 215卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-3951(199909)215:1<313::AID-PSSB313>3.3.CO;2-V

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the effects of annealing a self-assembled InGaAs/GaAs quantum dot sample between 580 and 700 degrees C by magnetoluminescence measurements at 2 K and fields up to 15 T. By using a high power density of about 5 kW/cm(2) for the excitation of the luminescence we were able to observe up to three features in addition to the ground-state emission arising from radiative recombination processes between excited states of the quantum dots. With increasing annealing temperature all emission lines shift to higher energies while varying their splittings. The diamagnetic shift of the ground-state emission as well as the Zeeman splittings of excited-state transitions exhibit a strong dependence on annealing and clearly speak for an increase in volume and Ga content of the dots.

引用

页码：313 / 318

页数：6

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