Design & Performance Analysis of Strained-Si N-MOSFET using TCAD

被引：0
|
作者：
Martha, Pramod [1 ]
Hota, Aditya Kumar [1 ]
Sethi, Kabiraj [1 ]
机构：
[1] Veer Surendra Sai Univ Technol, Dept Elect & Telecommun Engn, Burla, India
来源：
PROCEEDINGS OF 2ND IEEE INTERNATIONAL CONFERENCE ON ENGINEERING & TECHNOLOGY ICETECH-2016 | 2016年
关键词：
Strained Silicon; Diffusion; Salicide; Arora model; Capacitance; -Voltage; MOSFET; MOBILITY;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
Geometric Scaling and high channel doping incorporate loss in mobility. To compensate this, substrate engineering innovations like SOI(Silicon On Insulator) and strained silicon technologies are introduced In this paper NMOS is designed on Strained Si/relaxed Sio.sGeo.2 heterostructure using TCAD. Electrical analysis of Strained-Si nMOSFET has been done by the ATLAS 2D simulator using low field Arora mobility model. A mobility enhancement factor of 2.6 and transconductance enhancement of 100% at low voltage, compared to that of unstrained Si control device at room temperature(300K) achieved in this work.Parasitic gate capacitance, the reason for the rise in the delay time has been reduced in the range of 10(-15) E
引用
收藏
页码：958 / 961
页数：4
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