TCAD based performance analysis of junctionless cylindrical double gate all around FET up to 5nm technology node

被引：0
|
作者：
Hossain, N. M. Mahmud [1 ]
Quader, Sakib [1 ]
Siddik, Abu Bakar [1 ]
Chowdhury, Md. Iqbal Bahar [1 ]
机构：
[1] United Int Univ, Dept Elect & Elect Engn, Dhaka, Bangladesh
来源：
2017 20TH INTERNATIONAL CONFERENCE OF COMPUTER AND INFORMATION TECHNOLOGY (ICCIT) | 2017年
关键词：
gate-all-around; junctionless cylindrical double gate-all-around; subthreshold swing; Off current; On-Off current ratio; scaling;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, a cylindrical double gate-all-around technology is merged with junctionless technology to maximize gate control as well as to avoid loss due to the formation of junction in the source-channel-drain region. This advancement allows downscaling a junctionless cylindrical double gate all around FET (JL-CDGAA FET) up to 5nm channel length with acceptable performance in many of its parameters. A comparative study between JL-CDGAA FET and GAA FET is also presented in this work.
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页数：4
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