Long wavelength transverse magnetic polarized absorption in 1.3 μm InAs/InGaAs dots-in-a-well type active regions

被引：3
|
作者：
Crowley, M. T. [1 ]
Heck, S. C. [2 ]
Healy, S. B. [2 ]
Osborne, S. [2 ]
Williams, D. P. [2 ,3 ]
Schulz, S. [2 ]
O'Reilly, E. P. [2 ,4 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[2] Tyndall Natl Inst, Cork, Ireland
[3] Cork Inst Technol, Ctr Adv Photon & Proc Anal, Cork, Ireland
[4] Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 01期
基金：
爱尔兰科学基金会;
关键词：
ASSEMBLED QUANTUM DOTS; SPECTROSCOPY; GAIN;
D O I：
10.1088/0268-1242/28/1/015012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Edge-photovoltage measurements of InAs/GaAs 1.3 mu m dot-in-a-well structures clearly show a ground state (GS) transverse magnetic (TM) absorption. Based on eight-band k.p calculations we attribute this GS TM absorption peak to transitions between GS electrons and low-lying excited hole states which possess a significant light-hole component of the correct symmetry to recombine with the GS electrons.
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页数：6
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