Advancement in treating some features of CIGS thin film solar cells during manufacturing

被引:1
|
作者
Sharma, Poonam [1 ]
Li, Zhongli [1 ]
Chang, Hsueh Hsin [2 ]
Letha, Arya Jagadhamma [2 ]
Shao, Lexi [3 ]
Zhang, Yafei [1 ]
Hwang, Huey Liang [1 ,2 ]
机构
[1] Shanghai Jiao Tong Univ, Informat & Elect Engn & Photovolta Res Ctr, Key Lab Thin Film & Microfabricat Technol, Minist Educ,Sch Elect, Shanghai 200240, Peoples R China
[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[3] Lingnan Normal Univ, Sch Phys Sci & Technol, Zhanjiang, Peoples R China
关键词
CIGS; nonstoichiometric; material design; device design; process design; INTELLIGENT DESIGN TOOL; DEFECT PHYSICS; INDUSTRIALIZATION; STEPS;
D O I
10.1002/pssc.201400315
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In-line sputtering and selenization have become the industrial standard, but it is difficult to predict and control the local chemical composition of the film. The present communication reports on the material design, device design and process design. These designs use parameters that are closely related to their chemical compositions, as a variation in composition leads to modification of the Poisson equation, current equation and continuity equation. Therefore, there is a need to build a model that relates the optoelectrical properties and device structural parameters that will be loaded into the process simulation, to obtain the complete set of process control parameters. The detailed optical and electrical properties are also investigated for the development of an analytical solar cell simulator.
引用
收藏
页码:643 / 646
页数:4
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