An Approach in Testing the Absolute Maximum RF Input Power of an RF & Microwave Power Amplifier

被引:0
|
作者
John Manlapaz, Vincent [1 ]
Sejera, Marloun [1 ]
Ballado, Alejandro, Jr. [1 ]
机构
[1] Mapua Univ, Sch EECE, Manila, Philippines
关键词
radio frequency; RF power amplifiers; absolute maximum RF input power; gallium nitride (GaN) microwave monolithic integrated circuit;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
an approach in testing the absolute maximum radio frequency (RF) input power rating of an RF and microwave power amplifier is presented. A developed test method applying pretest, posttest, and destructive RF input power stress sweeps were used to verify the safe points and survivability limit of a gallium nitride microwave monolithic integrated circuit. The test method created incorporates actual DC and RF measuring equipment for collecting and logging current and power levels from the device under test. The developed test method and actual implementation proved to accurately measure both the absolute maximum rating safe datasheet specification and the actual RF input power where the part reaches actual breakdown. At these conditions, it is assured that the actual characterization and results are robust and is aligned to simulated absolute maximum rating specified in the datasheet. The approach proved to be a milestone in evaluating and characterizing RF active devices.
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页数:7
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