Traps effect on the I-V-T characteristics of Au/n-InP Schottky barrier diode

被引：0

作者：

Fritah, Abdallah ^{[1
]}

Dehimi, Lakhder ^{[1
,2
]}

Saadoune, Achour ^{[1
]}

Bekhouche, Khaled ^{[1
]}

机构：

[1] Biskra Univ, Dept Elect Engn, LMSM, Biskra, Algeria

[2] Elhadj Lakhdar Univ, Fac Mat Sci, Batna, Algeria

来源：

2018 INTERNATIONAL CONFERENCE ON COMMUNICATIONS AND ELECTRICAL ENGINEERING (ICCEE) | 2018年

关键词：

SBD; Traps; Series resistance; I-V curves intersection; CURRENT-VOLTAGE CHARACTERISTICS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present study, the I-V characteristic of Au/n-InP Schottky barrier diode (SBD) was simulated in the temperature range 200-300 K using the numerical simulator Atlas-Silvaco. By taking in to account the appropriate physical models and the presence of deep traps in the quasi-neutral region, the simulation was performed in goal to understand the effect of traps on the series resistance and the I-V curves intersection point. The obtained results clarified that the series resistance is related to the traps depth in the quasi-neutral region. In addition, the results prove that the I-V curves intersection point shift toward higher bias with increasing the series resistance value. Also the I-V curves crossing point found to be temperature dependent when the series resistance is not zero.

引用

页码：10 / 14

页数：5

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