Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

被引：76

作者：

Parkes, D. E. ^{[1
]}

Cavill, S. A. ^{[2
]}

Hindmarch, A. T. ^{[1
]}

Wadley, P. ^{[1
]}

McGee, F. ^{[1
]}

Staddon, C. R. ^{[1
]}

Edmonds, K. W. ^{[1
]}

Campion, R. P. ^{[1
]}

Gallagher, B. L. ^{[1
]}

Rushforth, A. W. ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Diamond Light Source Chilton, Didcot OX11 0DE, Oxon, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.4745789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe81Ga19 is shown to possess the favourable combination of cubic magnetic anisotropy and large magnetostriction necessary to achieve this functionality with experimentally accessible levels of strain. The switching of the magnetization proceeds by the motion of magnetic domain walls, also controlled by the voltage induced strain. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745789]

引用

页数：4

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