EUV Ellipsometry on Mo/Si Multilayers

被引：5
|
作者：
Uschakow, S. [1 ]
Gaupp, A. [1 ]
MacDonald, M. [2 ]
Schaefers, F. [1 ]
机构：
[1] HZB BESSY II, Inst Nanometre Opt & Technol, Albert Einstein Str 15, D-12489 Berlin, Germany
[2] Canadian Light Source Inc, Saskatoon, SK, Canada
来源：
11TH INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (SRI 2012) | 2013年 / 425卷
关键词：
POLARIMETER;
D O I：
10.1088/1742-6596/425/15/152011
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We investigate polarisation properties of a reflective Mo/Si multilayer system in the EUV range using polarized synchrotron radiation at BESSY-II. The characterization involves reflectivity measurements with s- and p-polarized light as a function of the wavelength for three different angles near normal incidence. The phase retardance is determined near normal incidence for one fixed angle of incidence as a function of the wavelength. As an additional spin-off of the polarimetry measurement the Stokes parameters of the beamline could be determined. With the 8-axis UHV-polarimeter we have measured the complex reflection coefficients for the first time and establish this ellipsometry technique as an additional sensitive probe to characterize and model multilayer optical elements.
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页数：4
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