EUV Ellipsometry on Mo/Si Multilayers

被引:5
|
作者
Uschakow, S. [1 ]
Gaupp, A. [1 ]
MacDonald, M. [2 ]
Schaefers, F. [1 ]
机构
[1] HZB BESSY II, Inst Nanometre Opt & Technol, Albert Einstein Str 15, D-12489 Berlin, Germany
[2] Canadian Light Source Inc, Saskatoon, SK, Canada
关键词
POLARIMETER;
D O I
10.1088/1742-6596/425/15/152011
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We investigate polarisation properties of a reflective Mo/Si multilayer system in the EUV range using polarized synchrotron radiation at BESSY-II. The characterization involves reflectivity measurements with s- and p-polarized light as a function of the wavelength for three different angles near normal incidence. The phase retardance is determined near normal incidence for one fixed angle of incidence as a function of the wavelength. As an additional spin-off of the polarimetry measurement the Stokes parameters of the beamline could be determined. With the 8-axis UHV-polarimeter we have measured the complex reflection coefficients for the first time and establish this ellipsometry technique as an additional sensitive probe to characterize and model multilayer optical elements.
引用
收藏
页数:4
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