GaAs devices and circuits for terahertz applications

被引：0

作者：

Crowe, TW ^{[1
]}

Weikle, RM ^{[1
]}

Hesler, JL ^{[1
]}

机构：

[1] Univ Virginia, Dept Elect Engn, Charlottesville, VA 22903 USA

来源：

1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews terahertz diode technology with regards to mixers, multipliers and sideband generation. Emphasis is placed on recent results and the improvements that are needed to ensure that this technology can not only meet the expanding needs of scientific researchers, but also be extended to future military and commercial applications.

引用

页码：929 / 932

页数：4

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