Physical vapor transport growth and properties of SiC monocrystals of 4H polytype

被引：0
|
作者：
Augustine, G
Hobgood, HM
Balakrishna, V
Dunne, G
Hopkins, RH
机构：
[1] Northrop Grumman Corporation, Electron. Sensors and Syst. Division, Science and Technology Center, Pittsburgh, PA 15235-5080
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1997年 / 202卷 / 01期
关键词：
D O I：
10.1002/1521-3951(199707)202:1<137::AID-PSSB137>3.0.CO;2-Y
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The physical vapor transport technique can be employed to fabricate large diameter silicon carbide crystals (up to 50 mm diameter) exhibiting uniform 4H-polytype over the full crystal volume. Crystal growth rate is controlled to first order by temperature conditions and ambient pressure. 4H-polytype uniformity is controlled by polarity of the seed crystal and the growth temperature. 4H-SiC crystals exhibit crystalline defects mainly in the form of dislocations with densities in the 10(4) cm(-2) range and micropipe defects, the latter having densities as low as 10 cm(-2) in best crystals. Electrical conductivity in 4H-SiC bulk crystals ranges from <10(-2) Omega cm, n-type, to insulating (>10(15) Omega cm) at room temperature.
引用
收藏
页码：137 / 148
页数：12
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