Fabrication and Electrical Characteristics of Metal-Ferroelectric Ba(Zr0.1Ti0.9)O3 Film-Insulator-Silicon Structure

We investigated that Al/Ba(Zr0.1Ti0.9)O-3 (BZT)/insulator-Silicon metal-ferroelectric-semiconductor (MFIS) and Al/BZT/Pt/Ti/SiO2/Silicon metal-ferroelectric-metal-insu- lator-semiconductor (MFMIS) ferroelectric structures and investigated the memory effect and dielectric constant with different insulator materials of thin films in the MFIS and MFMIS. The BZT thin films on SiO2/Si substrates show good capacitance-voltage characteristics and the threshold voltage shift of 20V at applied +/- 30V bias. However, the leakage current density of BZT on SiO2/Si at 0.5 MV/cm is two orders of magnitude lower than that on SixNy. The clockwise hysteresis loops in C-V curves of the MFIS structure were also observed clearly. From the dependence of C-V properties on different insulator materials, it is deduced that hysteresis loop dominated by the ion vacancy, defect and trap charges in the SixNy films.