Removal of phosphorus from metallurgical grade silicon by Ar-H2O gas mixtures

被引：16
|
作者：
Li, Feng [1 ]
Xing, Peng-fei [1 ]
Li, Da-gang [1 ]
Zhuang, Yan-xin [1 ]
Tu, Gan-feng [1 ]
机构：
[1] Northeastern Univ, Sch Met & Mat, Shenyang 110004, Peoples R China
来源：
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA | 2013年 / 23卷 / 11期
基金：
中国国家自然科学基金;
关键词：
metallurgical grade silicon; gas blowing; phosphorus; thermodynamics; POLYCRYSTALLINE SILICON;
D O I：
10.1016/S1003-6326(13)62890-3
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
The removal of phosphorus in metallurgical grade silicon (MG-Si) by water vapor carried with high purity argon was examined. The effect of the nozzle types, refining time, refining temperature, refining gas temperature and refining gas flow rate on the phosphorus removed was investigated by the self-designed gas blowing device. The optimal refining conditions are nozzle type of holes at bottom and side, refining time of 3 h, refining temperature of 1793 K, refining gas temperature of 373 K, refining gas flow rate of 2 L/min. Under these optimal conditions, the phosphorus content in MG-Si is reduced from 94x10(-6) initially to 11x10(-6) (mass fraction), which indicates that gas blowing refining is very effective to remove phosphorus in MG-Si.
引用
收藏
页码：3470 / 3475
页数：6
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