Scanning tunneling microscopy study of the Eu-induced Ge(111)-(3x2)/(3x4) reconstruction

被引:4
|
作者
Kuzmin, M [1 ]
Laukkanen, P [1 ]
Perälä, RE [1 ]
Väyrynen, IJ [1 ]
机构
[1] Univ Turku, Dept Phys, FIN-20014 Turku, Finland
关键词
D O I
10.1103/PhysRevB.73.125332
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Eu-induced (3x2) reconstruction of the Ge(111) surface has been investigated by scanning tunneling microscopy (STM). The empty-state STM images show the chainlike atomic structure that is similar to those of the metal-induced Si(111)-(3x2) surfaces with an adsorbate coverage of 1/6 monolayer (ML). The filled-state STM images combined with the empty-state images at the low bias voltage reveal that the Ge arrangement of Eu/Ge(111)-(3x2) can be well interpreted in terms of the honeycomb chain-channel (HCC) model with the characteristic Ge = Ge double bond and slightly modified Ge honeycomb chains which are similar to those of the 1/6-ML HCC structure of Si(111)-(3x2). In addition, the Eu/Ge(111)-(3x2) surface is found to have a local x4 periodicity along Eu chains, which can be explained, based on the analysis of STM line profiles, with two nonequivalent adsorption sites occupied by the Eu atoms in the empty channels of the HCC structure. The structural modifications of the Ge honeycomb chains as well as the origin of the x2 and x4 chains of Eu atoms in the HCC structure on the Eu/Ge(111) surface are discussed.
引用
收藏
页数:8
相关论文
共 50 条
  • [11] Atomic structure of the Ag/Ge(111)-(√3 x √3) surface: From scanning tunneling microscopy observation to theoretical study
    Chou, L. -W.
    Wu, H. C.
    Lee, Y. -R.
    Jiang, J. -C.
    Su, C.
    Lin, J. -C.
    JOURNAL OF CHEMICAL PHYSICS, 2009, 131 (22):
  • [12] THEORY OF SCANNING-TUNNELING-MICROSCOPY OF GE(111)-(2X2)
    DRAKOVA, D
    DOYEN, G
    PROGRESS IN SURFACE SCIENCE, 1994, 46 (2-3) : 251 - 274
  • [13] Scanning tunneling microscopy study of the Er/Ge(111) c(2X8) interface
    Pelletier, S
    Ehret, E
    Gautier, B
    Palmino, F
    Labrune, JC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (06): : 2738 - 2741
  • [14] PTCDA growth on Ge(111)-c(2 x 8) surfaces: a scanning tunneling microscopy study
    Martinez-Galera, A. J.
    Wei, Z.
    Nicoara, N.
    Brihuega, I.
    Gomez-Rodriguez, J. M.
    NANOTECHNOLOGY, 2017, 28 (09)
  • [15] Study of GaSb Layers Grown on Ga/Si(111)-√3 x √3 by Scanning Tunneling Microscopy
    Hara, Shinsuke
    Machida, Ryuto
    Yagishita, Kazuki
    Irokawa, Katsumi
    Miki, Hirofumi
    Kawazu, Akira
    Fujishiro, Hiroki I.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (08)
  • [16] Scanning tunneling microscopy study of thin PTCDI films on Ag/Si(111)-√3 x √3
    Emanuelsson, C.
    Zhang, H. M.
    Moons, E.
    Johansson, L. S. O.
    JOURNAL OF CHEMICAL PHYSICS, 2017, 146 (11):
  • [17] SCANNING TUNNELING MICROSCOPY OF ROOT-3 X ROOT-3-BI RECONSTRUCTION ON THE SI(111) SURFACE
    PARK, C
    BAKHTIZIN, RZ
    HASHIZUME, T
    SAKURAI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2B): : L290 - L293
  • [18] Na- and Li-induced Ge(111)3x1 reconstruction: Different electronic configurations revealed by scanning tunneling microscopy images
    Lee, G
    Kim, J
    Mai, H
    Chizhov, I
    Willis, RF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (04): : 1488 - 1491
  • [19] GAAS(111) A-(2X2) RECONSTRUCTION STUDIED BY SCANNING TUNNELING MICROSCOPY
    HABERERN, KW
    PASHLEY, MD
    PHYSICAL REVIEW B, 1990, 41 (05): : 3226 - 3229
  • [20] Theoretical study of the (3x2) reconstruction of β-SiC(001)
    Pizzagalli, L
    Catellani, A
    Galli, G
    Gygi, F
    Baratoff, A
    PHYSICAL REVIEW B, 1999, 60 (08) : R5129 - R5132