First-Principles Study of Crown Ether and Crown Ether-Li Complex Interactions with Graphene

被引:12
|
作者
Wang, Wei-Hua [1 ,2 ,3 ]
Gong, Cheng [1 ]
Wang, Weichao [1 ,2 ,3 ]
Fullerton-Shirey, Susan K. [4 ]
Seabaugh, Alan [4 ]
Cho, Kyeongjae [1 ]
机构
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[2] Nankai Univ, Coll Elect Informat & Opt Engn, Dept Elect, Tianjin 300071, Peoples R China
[3] Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin Key Lab Photoelect Thin Film Device & Tec, Tianjin 300071, Peoples R China
[4] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2015年 / 119卷 / 34期
关键词
SINGLE-LAYER; METAL; FUNCTIONALIZATION; DIFFUSION; GAS;
D O I
10.1021/acs.jpcc.5b07049
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Adsorption of molecules on graphene is a promising route to achieve novel functionalizations, which can lead to new devices. Density functional theory is used to calculate stabilities, electronic structures, charge transfer, and work function for a crown-4 ether (CE) molecule and a CE-Li (or CE-Li+) complex adsorbed on graphene. For a single CE on graphene, the adsorption distance is large with small adsorption energies, regardless of the relative lateral location of the CE. Because CE interacts weakly with graphene, the charge transfer between the CE and graphene is negligibly small. When Li and Li+ are incorporated, the adsorption energies significantly increase. Simultaneously, an n-type doping of graphene is introduced by a considerable amount of charge transfer in CE-Li adsorbed system. In all of the investigated systems, the linear dispersion of the p, band in graphene at the Dirac point is well-preserved; however, the work function of graphene is effectively modulated in the range of 3.69 to 5.09 eV due to the charge transfer and the charge redistribution by the adsorption of CE-Li and CE-Li+ (or CE), respectively. These results provide graphene doping and work function modulation without compromising graphene's intrinsic electronic property for device applications using CE-based complexes.
引用
收藏
页码:20016 / 20022
页数:7
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