Giant optical anisotropy in M-plane GaN/AlGaN quantum wells due to crystal-field effect

被引：1
|
作者：
Chen, Chun-Nan [1 ]
Su, Wei-Long [2 ]
Chang, Kuo-Ching [3 ]
Chang, Sheng-Hsiung [3 ]
Chiang, Jih-Chen [4 ,5 ]
Lo, Ikai [4 ,5 ]
Wang, Wan-Tsang [4 ,5 ]
Kao, Hsiu-Fen [4 ,5 ]
Lee, Meng-En [6 ]
机构：
[1] Tamkang Univ, Dept Phys, Quantum Sci Simulat & Comp Lab, Tamsui 251, Taipei County, Taiwan
[2] Lee Ming Inst Technol, Dept Elect Engn, Taishan, Taipei County, Taiwan
[3] Far E Univ, Dept Elect Engn, Hsin Shih Town 744, Tainan County, Taiwan
[4] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan
[5] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung, Taiwan
[6] Natl Kaohsiung Normal Univ, Dept Phys, Yanchao Township, Kaohsiung Count, Taiwan
来源：
PHYSICS LETTERS A | 2008年 / 372卷 / 37期
关键词：
M-plane; crystal field; optical anisotropy; wurtzite; valence band mixing;
D O I：
10.1016/j.physleta.2008.07.048
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The optical polarization of GaN/AlGaN wurtzite quantum wells in various orientations is studied using an arbitrarily-oriented [hkil] Hamiltonian potential matrix. The optical matrix elements in the wurtzite quantum wells are calculated using the k . p finite difference scheme. The results reveal the presence of giant in-plane optical anisotropy (polarized normal to [0001]) in the M-plane (i.e., the (10 (1) over bar0)-oriented layer plane) GaN/Al0.2Ga0.8N quantum well, due to the positive crystal-field split energy effect (Delta(CR) > 0). The present theoretical results are consistent with the photoluminescence measurements presented in the literature [B. Rau, et al., Appl. Phys. Lett. 77 (2000) 3343]. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：5915 / 5917
页数：3
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