Impact of Added Gallium and Phosphorus in Bismuth-Tin Solder Alloys on Mechanical Properties and Microstructure of Intermetallic Layer

被引:1
|
作者
Kralova, Iva [1 ]
Klimtova, Marketa [1 ]
Vesely, Petr [1 ]
机构
[1] Czech Tech Univ, Fac Elect Engn, Dept Electrotechnol, Prague, Czech Republic
关键词
D O I
10.1109/ISSE54558.2022.9812758
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The goal of this work was to evaluate changes in mechanical properties and microstructure of the lead-free bismuth-tin alloys when adding gallium and phosphorus. These elements were added originally on account of melting temperature decrease (Ga) and improvement of wetting (P). Six different solders were examined: the eutectic one Bi58Sn42 as a reference, then Bi59Sn40Ga1 and Bi57Sn40Ga3. In addition, the investigation was also performed on all the mentioned alloys with an added trace amount of phosphorus. Mechanical properties were measured by the shear test of a solder ball on a copper substrate with Organic Solderability Preservatives (OSP) surface finish. Furthermore, the small balls of solder alloys were reflowed on boards with three different surface finishes: copper-plated, Hot Air Solder Levelling (HASL), and Electroless Nickel Immersion Gold (ENIG). These coupons were left to aging in the climatic chamber for 500 and 1 000 hours at a temperature of 100 degrees C. The metallographic cross-sections were made, and the microstructure of the intermetallic layer (IML) was analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis. The shear test showed a significant decrease in the shear force by adding gallium. It was also found that the addition of phosphorus has only a minor (but still statistically significant) impact on the shear force. The addition of gallium affected the IML thickness and caused a considerable decrease compared to alloys without Ga. The reason was the composition of the IML. IML of Bi-Sn solder joints consisted of Cu-Sn, whereas the gallium-containing alloys formed IML consisted of Cu-Ga.
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页数:7
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