Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

被引:11
|
作者
Tan, Chun Chia [1 ,2 ]
Shi, Luping [3 ]
Zhao, Rong [4 ]
Guo, Qiang [5 ]
Li, Yi [6 ]
Yang, Yi [1 ]
Chong, Tow Chong [4 ]
Malen, Jonathan A. [7 ]
Ong, Wee-Liat [7 ]
Schlesinger, Tuviah E. [2 ]
Bain, James A. [2 ]
机构
[1] ASTAR, Data Storage Inst, Singapore 117608, Singapore
[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
[3] Tsinghua Univ, Dept Precis Instrument, Opt Memory Natl Engn Res Ctr, Beijing 100084, Peoples R China
[4] Singapore Univ Technol & Design, Singapore 138682, Singapore
[5] Shanghai Jiao Tong Univ, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
[6] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore
[7] Carnegie Mellon Univ, Dept Mech Engn, Pittsburgh, PA 15213 USA
关键词
THIN-FILMS; GE2SB2TE5;
D O I
10.1063/1.4823551
中图分类号
O59 [应用物理学];
学科分类号
摘要
A compositionally matched superlattice-like (SLL) structure comprised of Ge2Sb2Te5 (GST) and nitrogen-doped GST (N-GST) was developed to achieve both low current and high endurance Phase Change Random Access Memory (PCRAM). N-GST/GST SLL PCRAM devices demonstrated similar to 37% current reduction compared to single layered GST PCRAM and significantly higher write/erase endurances of similar to 10(8) compared to similar to 10(6) for GeTe/Sb2Te3 SLL devices. The improvements in endurance are attributed to the compositionally matched N-GST/GST material combination that lowers the diffusion gradient between the layers and the lower crystallization-induced stress in the SLL as revealed by micro-cantilever stress measurements. (C) 2013 AIP Publishing LLC.
引用
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页数:5
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