14 dBm, 18-20 GHz Injection-Locked Power Amplifier with 45% Peak PAE in 65nm CMOS

被引：0

作者：

Hamed, Ahmed ^{[1
]}

Saeed, Mohamed ^{[1
]}

Negra, Renato ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Chair High Frequency Elect, Aachen, Germany

来源：

2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated injection-locked CMOS power amplifier (IL-PA) that operates in the 18 - 20 GHz frequency band with a single-ended input and differential output is demonstrated. The presented power amplifier is based on an injection-locked LC-oscillator core utilizing novel circuit configuration as well as new layout considerations which allow for an optimum power amplifier design with minimum layout parasitics as well as maximum power added efficiency. The novel architecture is demonstrated in a standard 65nm CMOS technology achieving 14 dBm of output power and 45% peak power added efficiency. The circuit occupies a chip area of 900 mu m x 800 mu m.

引用

页码：261 / 264

页数：4

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