Surface textured silicon single-photon avalanche diode

被引：0

作者：

Zang, Kai ^{[1
]}

Ding, Xun ^{[2
,3
,4
]}

Jiang, Xiao ^{[2
,3
,4
]}

Huo, Yijie ^{[1
]}

Morea, Matthew ^{[1
]}

Chen, Xiaochi ^{[1
]}

Lu, Ching-Ying ^{[1
]}

Xue, Muyu ^{[5
]}

Chen, Yusi ^{[1
]}

Shang, Colleen ^{[5
]}

Kamins, Theodore I. ^{[1
]}

Zhang, Qiang ^{[2
,3
,4
]}

Pan, Jian-Wei ^{[2
,3
,4
]}

Harris, James S. ^{[1
,5
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] USTC, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China

[3] USTC, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China

[4] USTC, Innovat Ctr Quantum Informat & Quantum Phys, CAS Ctr Excellence & Synerget, Shanghai Branch, Hefei 230026, Anhui, Peoples R China

[5] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a surface textured Si SPAD with improved detection efficiency and without sacrificing dark count rate or jitter distribution. Texturing reduces reflection, allows weak light trapping and is CMOS and lithography compatible.

引用

页数：2

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