Microstructural study of polycrystalline films prepared by Ni vapor induced crystallization

被引：0

作者：

Ahn, Kyung Min ^{[1
]}

Lee, Kye Ung ^{[1
]}

Ahn, Byung Tae ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NiCl2 vapor was introduced into conventional furnace to conduct vapor-induced crystallization (VIC) process. We made the metal chloride atmosphere by sublimating the NiCl2 compound. The NiCl2 atmosphere enhanced the crystallization of amorphous silicon thin films. As the result, polycrystalline Si film with large grain size and low metal contamination has been obtained.

引用

页码：715 / 717

页数：3

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