Heterostructure laser-transistors controlled by resonant-tunnelling electron extraction

被引：3
|
作者：
Ryzhii, V
Willander, M
Ryzhii, M
Khmyrova, I
机构：
[1] CHALMERS UNIV TECHNOL, S-41296 GOTHENBURG, SWEDEN
[2] GOTHENBURG UNIV, S-41296 GOTHENBURG, SWEDEN
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 04期
关键词：
D O I：
10.1088/0268-1242/12/4/016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Three-terminal laser-transistors with a quantum well active region and a resonant-tunnelling collector are proposed and considered. It is shown that the laser-transistor is controlled by the collector voltage due to electron extraction via the resonant-tunnelling structure. The current-voltage and light-voltage characteristics are calculated. Both of them reflect effective voltage control and possible bistable behaviour of the laser-transistor in a certain range of the collector voltage. The electron heating due to electron injection and extraction can significantly affect the controllability and bistability of the laser-transistor.
引用
收藏
页码：431 / 438
页数：8
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  • [1] Resonant tunnelling hot electron transistors: Present status and future prospects
    Yokoyama, N
    Imamura, K
    Takatsu, M
    Mori, T
    Adachihara, T
    Sugiyama, Y
    Sakuma, Y
    Tackeuchi, A
    Muto, S
    [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1996, 354 (1717): : 2399 - 2411
  • [2] Voltage controlled electron spin dynamics in resonant tunnelling devices
    Galeti, H. V. A.
    Brasil, M. J. S. P.
    Galvao Gobato, Y.
    Henini, M.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (16)
  • [3] Resonant tunnelling diodes and high electron mobility transistors integrated on GaAs substrates
    Huang, YL
    Ma, L
    Yang, FH
    Wang, LC
    Zeng, YP
    [J]. CHINESE PHYSICS LETTERS, 2006, 23 (03) : 697 - 700
  • [4] Microwave-frequency operation of resonant tunnelling high electron mobility transistors
    Chen, KJ
    [J]. 1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1997, : 106 - 109
  • [5] RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS (RHETS) USING AN INGAAS/IN(ALGA)AS HETEROSTRUCTURE
    IMAMURA, K
    MUTO, S
    YOKOYAMA, N
    [J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1988, 24 (01): : 54 - 59
  • [6] Study of the Coupling of Terahertz Radiation to Heterostructure Transistors with a Free Electron Laser Source
    Ortolani, Michele
    Di Gaspare, Alessandra
    Giovine, Ennio
    Evangelisti, Florestano
    Foglietti, Vittorio
    Doria, Andrea
    Gallerano, Gian Piero
    Giovenale, Emilio
    Messina, Giovanni
    Spassovsky, Ivan
    Lanzieri, Claudio
    Peroni, Marco
    Cetronio, Antonio
    [J]. JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 2009, 30 (12) : 1362 - 1373
  • [7] RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS (RHETS) USING INGAAS/IN(ALGA)AS HETEROSTRUCTURE
    IMAMURA, K
    MUTO, S
    OHNISHI, H
    FUJII, T
    YOKOYAMA, N
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2382 - 2382
  • [8] Study of the Coupling of Terahertz Radiation to Heterostructure Transistors with a Free Electron Laser Source
    Michele Ortolani
    Alessandra Di Gaspare
    Ennio Giovine
    Florestano Evangelisti
    Vittorio Foglietti
    Andrea Doria
    Gian Piero Gallerano
    Emilio Giovenale
    Giovanni Messina
    Ivan Spassovsky
    Claudio Lanzieri
    Marco Peroni
    Antonio Cetronio
    [J]. Journal of Infrared, Millimeter, and Terahertz Waves, 2009, 30 : 1362 - 1373
  • [9] Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)
    Sakata, H
    Utaka, K
    Matsushima, Y
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 1996, 28 (05) : 591 - 597
  • [10] RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS (RHET'S) USING INGAAS/IN(ALGA)AS HETEROSTRUCTURE.
    Imamura, K.
    Muto, S.
    Ohnishi, H.
    Fujii, T.
    Yokoyama, N.
    [J]. IEEE Transactions on Electron Devices, 1987, ED-34 (11)
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