Recent developments and future perspectives in 3D silicon radiation sensors

被引：11

作者：

Dalla Betta, G. -F. ^{[1
,2
]}

Da Via, C. ^{[3
]}

Povoli, M. ^{[1
,2
]}

Parker, S. ^{[4
]}

Boscardin, M. ^{[5
]}

Darbo, G. ^{[6
]}

Grinstein, S. ^{[7
,8
]}

Grenier, P. ^{[9
]}

Hasi, J. ^{[9
]}

Kenney, C. ^{[9
]}

Kok, A. ^{[10
]}

Lai, C. -H. ^{[3
]}

Pellegrini, G. ^{[11
]}

Watts, S. ^{[3
]}

机构：

[1] Univ Trent, DISI, I-38123 Povo, TN, Italy

[2] INFN, Sez Padova, Grp Coll Trento, I-38123 Povo, TN, Italy

[3] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[4] Univ Hawaii, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[5] Fdn Bruno Kessler FBK CMM, I-38123 Povo, TN, Italy

[6] Ist Nazl Fis Nucl, Sez Genova, I-14146 Genoa, Italy

[7] UAB, IFAE, Bellaterra 08193, Barcelona, Spain

[8] UAB, ICREA, Bellaterra 08193, Barcelona, Spain

[9] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[10] SINTEF MiNaLab, N-0314 Oslo, Norway

[11] CSIC, CNM, IMB, E-08193 Barcelona, Spain

来源：

JOURNAL OF INSTRUMENTATION | 2012年 / 7卷

关键词：

Solid state detectors; Radiation-hard detectors; Detector modelling and simulations II (electric fields; charge transport; multiplication and induction; pulse formation; electron emission; etc); Particle tracking detectors (Solid-state detectors); DETECTORS;

D O I：

10.1088/1748-0221/7/10/C10006

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper we report on the most recent achievements of the ATLAS 3D Sensors Collaboration in the development of silicon 3D sensors. Results from 3D pixels production for the ATLAS Insertable B-Layer (IBL) are presented, showing the high quality and good process reproducibility of the technology. In view of the future detector upgrades at the LHC, a new generation of 3D pixel sensors will be developed. This will require some new ideas and the solution of technological challenges. Both will briefly be addressed in this paper.

引用

页数：7

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