An Illumination- and Temperature-Dependent Analytical Model for Copper Indium Gallium Diselenide (CIGS) Solar Cells

In this paper, we present a physics-based analytical model for copper indium gallium diselenide (CIGS) solar cells that describes the illumination-and temperature-dependent currentvoltage (I-V) characteristics and accounts for the statistical shunt variation of each cell. The model is derived by solving the driftdiffusion transport equation so that its parameters are physical and, therefore, can be obtained from independent characterization experiments. The model is validated against CIGS I-V characteristics as a function of temperature and illumination intensity. This physics-basedmodel can be integrated into a large-scale simulation framework to optimize the performance of solar modules, as well as predict the long-term output yields of photovoltaic farms under different environmental conditions.