Nanoimprint stamps with ultra-high resolution: Optimal fabrication techniques

被引：8

作者：

Graczyk, Mariusz ^{[1
,2
]}

Cattoni, Andrea ^{[3
]}

Rosner, Benedikt ^{[4
]}

Seniutinas, Gediminas ^{[4
]}

Lofstrand, Anette ^{[1
,2
]}

Kvennefors, Anders ^{[1
,2
]}

Mailly, Dominique ^{[3
]}

David, Christian ^{[4
]}

Maximov, Ivan ^{[1
,2
]}

机构：

[1] Lund Univ, Div Solid State Phys, Lund Nano Lab, Box 118, SE-22100 Lund, Sweden

[2] Lund Univ, NanoLund, Box 118, SE-22100 Lund, Sweden

[3] Univ Paris Saclay, Univ Paris Sud, CNRS, Ctr Nanosci & Nanotechnol C2N, Route Nozay, F-91460 Marcoussis, France

[4] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

来源：

MICROELECTRONIC ENGINEERING | 2018年 / 190卷

关键词：

Nanoimprint; Stamp; Pattern transfer; Ultra-high resolution; OrmoStamp; LITHOGRAPHY;

D O I：

10.1016/j.mee.2018.01.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-digit nanometer patterning by nanoimprint lithography is a challenging task, which requires optimum stamp fabrication technique. In the current work, we present different strategies for technology of hard master stamps to make intermediate working stamps with sub-10 nm features. Methods of both negative and positive master stamps fabrication, based on EBL, RIE and ALD are described and compared. A single-step copying of negative master stamps using a polymer material is a preferred strategy to reach the ultra high-resolution. Lines as small as 5.6 nm are demonstrated in a resist using a combined thermal and UV-imprint with OrmoStamp material as a working stamp. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：73 / 78

页数：6

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