Nanoimprint stamps with ultra-high resolution: Optimal fabrication techniques

被引:8
|
作者
Graczyk, Mariusz [1 ,2 ]
Cattoni, Andrea [3 ]
Rosner, Benedikt [4 ]
Seniutinas, Gediminas [4 ]
Lofstrand, Anette [1 ,2 ]
Kvennefors, Anders [1 ,2 ]
Mailly, Dominique [3 ]
David, Christian [4 ]
Maximov, Ivan [1 ,2 ]
机构
[1] Lund Univ, Div Solid State Phys, Lund Nano Lab, Box 118, SE-22100 Lund, Sweden
[2] Lund Univ, NanoLund, Box 118, SE-22100 Lund, Sweden
[3] Univ Paris Saclay, Univ Paris Sud, CNRS, Ctr Nanosci & Nanotechnol C2N, Route Nozay, F-91460 Marcoussis, France
[4] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
关键词
Nanoimprint; Stamp; Pattern transfer; Ultra-high resolution; OrmoStamp; LITHOGRAPHY;
D O I
10.1016/j.mee.2018.01.008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-digit nanometer patterning by nanoimprint lithography is a challenging task, which requires optimum stamp fabrication technique. In the current work, we present different strategies for technology of hard master stamps to make intermediate working stamps with sub-10 nm features. Methods of both negative and positive master stamps fabrication, based on EBL, RIE and ALD are described and compared. A single-step copying of negative master stamps using a polymer material is a preferred strategy to reach the ultra high-resolution. Lines as small as 5.6 nm are demonstrated in a resist using a combined thermal and UV-imprint with OrmoStamp material as a working stamp. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:73 / 78
页数:6
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