Design and Breakdown Behavior of 77GHz Variable Gain Power Amplifiers in SiGe-Technology

被引：0
|
作者：
Borutta, K. [1 ]
Laemmle, B. [1 ]
Wagner, C. [2 ]
Maurer, L. [2 ]
Weigel, R. [1 ]
Kissinger, D. [1 ]
机构：
[1] Univ Erlangen Nurnberg, Inst Elect Engn, Cauerstr 9, D-91058 Erlangen, Germany
[2] DICE, A-4040 Linz, Austria
来源：
2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2013年
关键词：
Millimeter-wave integrated circuits; differential power amplifier; Silicon Germanium(SiGe); breakdown effect;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents two fully integrated differential programmable power amplifiers for automotive radar applications at 77GHz. The power amplifiers were fabricated in a silicon-germanium technology featuring bipolar transistors with an f(t)/f(max) of 200GHz/250GHz. Measurements have been performed for different temperatures, in particular at -40 degrees, 27 degrees and 125 degrees. A maximum gain of 10 dB is achieved for both amplifiers at room temperature. In addition the breakdown behavior of both amplifiers has been investigated. The building blocks of the amplifiers, which are affected by the breakdown effect had been indentified and design guidelines to avoid breakdown effects in power amplifiers are presented.
引用
收藏
页码：572 / 575
页数：4
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