Fabrication of multiband MgB2 tunnel junctions for transport measurements

被引:6
|
作者
van Zalk, M.
Brinkman, A.
Golubov, A. A.
Hilgenkamp, H.
Kim, T. H.
Moodera, J. S.
Rogalla, H.
机构
[1] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands
[2] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
[3] Ewha Womans Univ, Dept Phys, Seoul, South Korea
[4] MIT, Francis Bitter Magnet Lab, Cambridge, MA 02139 USA
来源
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2006年 / 19卷 / 05期
关键词
D O I
10.1088/0953-2048/19/5/S13
中图分类号
O59 [应用物理学];
学科分类号
摘要
The coexistence of multiple superconducting condensates in a material gives rise to intriguing phenomena, such as the possible presence of number-phase fluctuations. In this work, tunnel junctions were fabricated, aiming for the detection of such phenomena. Planar junctions with normal conducting and superconducting counter-electrodes have been realized. It was found from spectroscopic investigations that the MgO barrier used for the planar junctions is not ideal. To optimize for the two-band behaviour of MgB2, ab-plane ramp-type MgB2 tunnel junctions were fabricated. The use of Al2O3 barriers substantially improved the homogeneity of the junctions, as was concluded from the nearly ideal magnetic field dependence of the critical current and excellent scaling of the junction properties with the junction widths. The current-voltage characteristics show clear Shapiro steps under microwave irradiation. However, the spectrum showed a degradation of the MgB2 in the ramp region and the signature of the sigma-gap was absent. For tunnel junction spectroscopy in the ab-direction and the detection of new, two-band related modes, the fabrication process still has to be further optimized.
引用
收藏
页码:S226 / S230
页数:5
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