Magnetic Properties and Antiferromagnetic Coupling in Inhomogeneous Zn1-xFexO Magnetic Semiconductor

被引：2
|
作者：
Deng Jiang-Xia [1 ,2 ]
Yan Shi-Shen [1 ,2 ]
Mei Liang-Mo [1 ,2 ]
Liu, J. P. [3 ]
Altuncevahir, B. [3 ]
Chakka, V. [3 ]
Wang Yong [4 ]
Zhang Ze [4 ]
Sun Xiang-Cheng [5 ]
Lian, J. [5 ]
Sun, K. [5 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
[2] Shandong Univ, Natl Key Lab Crystal Mat, Jinan 250100, Peoples R China
[3] Univ Texas Arlington, Dept Phys, Arlington, TX 76019 USA
[4] Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100022, Peoples R China
[5] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
来源：
CHINESE PHYSICS LETTERS | 2009年 / 26卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Magnetic properties - Binary alloys - Antiferromagnetism - Ferromagnetic materials - Ferromagnetism - Oxide semiconductors - Oxide films;
D O I：
10.1088/0256-307X/26/2/027502
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Zn1-xFexO inhomogeneous oxide magnetic semiconductor films with high Fe concentration are prepared by sputtering, and fast annealing is carried out at different temperatures. It is found that magnetic properties are greatly modulated by controlling the composition inhomogeneity and subsequently fast annealing. Both ferromagnetic and paramagnetic components are found to coexist in the as-deposited Zn1-xFexO magnetic semiconductor. In particular, the antiferromagnetic coupling between the neighbouring local ferromagnetic regions is found in the as-deposited Zn0.23Fe0.77O film, and the antiferromagnetic coupling strength increases with increasing temperature from 110 K to 300 K. We believe that this unusual antiferromagnetic coupling is mediated by thermally activated hopping carriers.
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页数：4
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