Cryogenic Broadband Q-Band MMIC Low-Noise Amplifier

被引：0
|
作者：
Teran Collantes, J. Vicente [1 ]
de la Fuente, Luisa [1 ]
Aja, Beatriz [1 ]
Artal, Eduardo [1 ]
机构：
[1] Univ Cantabria, Dept Ingn Comunicac, Santander, Spain
来源：
2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年
关键词：
Monolithic Microwave Integrated Circuit (MMIC); Low Noise Amplifier (LNA); broadband amplifiers; cryogenic; GaAs mHEMT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design of a broad-band monolithic cryogenic low-noise amplifier (MMIC LNA) in the Q band, aimed to be used in radio-astronomy receiver front-end modules is presented. A 70 nm gate-length GaAs mHEMT process from OMMIC foundry is used to manufacture the amplifier. An accurate model for the minimum noise bias point of the transistor has been obtained at room temperature. The amplifier design is based on a four stage monolithic common source transistor configuration. At 300 K, the amplifier shows an associated gain of 28 +/- 1.1 dB and an average noise temperature of 145 K with a minimum noise temperature of 101 K at 45 GHz tested on wafer. When cooled down at 15 K, the average noise temperature is 18.4 K with a minimum of 13.5 K and 27.3 dB of associated gain. The DC power consumption is extremely low, 4.1 mW, at cryogenic temperature.
引用
收藏
页码：81 / 84
页数：4
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