In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition

被引：1

作者：

Ding Yu ^{[1
]}

Liu Bin ^{[1
]}

Tao Tao ^{[1
]}

Li Yi ^{[1
]}

Zhang Zhao ^{[1
]}

Zhang Rong ^{[1
]}

Xie Zi-Li ^{[1
]}

Zhao Hong ^{[1
]}

Gu Shu-Lin ^{[1
]}

Lv Peng ^{[2
]}

Zhu Shi-Ning ^{[2
]}

Zheng You-Dou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Sch Phys, Nanjing 210093, Jiangsu, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 10期

基金：

中国国家自然科学基金;

关键词：

POLARIZATION ANISOTROPY; PHOTOLUMINESCENCE; FIELDS; STRAIN; LAYERS; ALN;

D O I：

10.1088/0256-307X/29/10/107801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence (PL), optical transmission and Raman scattering measurements. Through polarised PL and transmission spectra, the in-plane optical anisotropic properties of a-plane GaN film are found, which are attributed to the topmost valance band (at G point) split into three sub-bands under anisotropic strain. The PL spectra also exhibit that the light hole band moves up more rapidly than the spin-orbit crystal-field spilt-off hole band with the increasing in-plane anisotropic compressive strain. Raman scattering spectra under different configurations further indicate the in-plane anisotropy and the hexagonal crystalline structure of these a-plane GaN films.

引用

页数：4

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