An Investigation of Differences in Electron and Hole Confinement in InAs/InGaAsP Quantum Dash Lasers

被引：0
|
作者：
Heck, S. C. [1 ]
Healy, S. B. [1 ]
Osborne, S. [1 ]
Williams, D. P. [1 ]
Fehse, R. [1 ,2 ]
O'Reilly, E. P. [1 ]
Lelarge, F. [3 ]
Poingt, F.
Accard, A.
Pommereau, F.
Legouezigou, O.
Dagens, B. [3 ]
机构：
[1] Tyndall Natl Inst, Cork, Ireland
[2] OSRAM Opoto semicond, GmbH, D-93055 Regensburg, Germany
[3] Alcatel Thales Lab III V, F-91767 Palaiseau, France
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We calculate that strain and confinement effects lead to similar conduction and valence density of states in InGaAsP quantum dashes. Room temperature threshold remains dominated by nonradiative recombination, as in 1.5 mu m quantum well lasers. (c) 2008 Optical Society of America
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页码：1244 / +
页数：2
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