Transverse electric dominant intersubband absorption in Si-doped GaInAsN/GaAs quantum wells

被引：15
|
作者：
Zhang, DH [1 ]
Liu, W
Sun, L
Fan, WJ
Yoon, SF
Wang, SZ
Liu, HC
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 04期
关键词：
D O I：
10.1063/1.2172719
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report observation of transverse electric (TE) dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in narrow quantum wells, the ground state is pushed up, which enhances the interaction with nitrogen state and significantly changes the nature of the state. (c) 2006 American Institute of Physics.
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页数：4
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