Transverse electric dominant intersubband absorption in Si-doped GaInAsN/GaAs quantum wells

被引：15
|
作者：
Zhang, DH [1 ]
Liu, W
Sun, L
Fan, WJ
Yoon, SF
Wang, SZ
Liu, HC
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 04期
关键词：
D O I：
10.1063/1.2172719
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report observation of transverse electric (TE) dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in narrow quantum wells, the ground state is pushed up, which enhances the interaction with nitrogen state and significantly changes the nature of the state. (c) 2006 American Institute of Physics.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Transverse electric dominant intersubband absorption in Si-doped GaInAsNGaAs quantum wells
    Zhang, D.H.
    Liu, W.
    Sun, L.
    Fan, W.J.
    Yoon, S.F.
    Wang, S.Z.
    Liu, H.C.
    Journal of Applied Physics, 1600, 99 (04):
  • [2] Experimental observation of intersubband excitations in Si-doped GaAs/AlAs multiple quantum wells
    Matsumoto, Toshiyuki, 1600, JJAP, Minato-ku, Japan (34):
  • [3] EXPERIMENTAL-OBSERVATION OF INTERSUBBAND EXCITATIONS IN SI-DOPED GAAS/ALAS MULTIPLE-QUANTUM WELLS
    MATSUMOTO, T
    HARAGUCHI, M
    FUKUI, M
    YAMAGUCHI, M
    KUBO, H
    HAMAGUCHI, C
    NAKASHIMA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (5A): : 2241 - 2246
  • [4] NORMAL INCIDENCE INTERSUBBAND TRANSITIONS IN SI-DOPED INGAAS MULTIPLE-QUANTUM WELLS
    PENG, LH
    FONSTAD, CG
    APPLIED PHYSICS LETTERS, 1993, 62 (25) : 3342 - 3344
  • [5] The electric field effects on intersubband optical absorption of Si δ-doped GaAs layer
    Ozturk, E
    Sokmen, I
    SOLID STATE COMMUNICATIONS, 2003, 126 (11) : 605 - 609
  • [6] Nonlinear intersubband optical absorption of Si δ-doped GaAs under an electric field
    Yildirim, Hasan
    Tomak, Mehmet
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (12): : 2874 - 2881
  • [7] Modulation of optical absorption of GaAs/AlGaAs quantum wells in a transverse electric field
    Vorob'ev, LE
    Zibik, EA
    Firsov, DA
    Shalygin, VA
    Nashchekina, ON
    Saidashev, II
    SEMICONDUCTORS, 1998, 32 (07) : 754 - 756
  • [8] Temperature dependence of Raman spectra in Si-doped GaAs/AlAs multiple quantum wells
    Matsumoto, T
    Haraguchi, M
    Fukui, M
    Kubo, H
    Hamaguchi, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4A): : 2068 - 2072
  • [9] Temperature dependence of Raman spectra in Si-doped GaAs/AlAs multiple quantum wells
    Matsumoto, Toshiyuki
    Haraguchi, Masanobu
    Fukui, Masuo
    Kubo, Hitoshi
    Hamaguchi, Chihiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (4 A): : 2068 - 2072
  • [10] Modulation of optical absorption of GaAs/AlGaAs quantum wells in a transverse electric field
    L. E. Vorob’ev
    E. A. Zibik
    D. A. Firsov
    V. A. Shalygin
    O. N. Nashchekina
    I. I. Saidashev
    Semiconductors, 1998, 32 : 754 - 756
12345