Effect of impurity doping on the mechanical properties of AlxGa1-xN ternary alloys

被引：0

作者：

Terao, S ^{[1
]}

Iwaya, M ^{[1
]}

Nakamura, R ^{[1
]}

Kamiyama, S ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

critical thickness; MOSS; film stress; biaxial modulus; impurity hardening effect; AlxGa1-xN; GaN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stress during growth of AlxGa1-xN/GaN heterostructure was measured by multi-beam optical stress sensor system. The film stress was increased with increase of Si or Mg concentration in AlxGa1-xN, which resulted in crack generation in AlxGa1-xN.

引用

页码：640 / 643

页数：4

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