Effect of MnO addition on the electrical properties of Nb-doped SrTiO3 varistor

被引:21
|
作者
Kim, SH
Seon, HW
Kim, HT
Park, JG
Kim, YH
Byun, JD
机构
[1] Korea Inst Sci & Technol, Div Ceram, Seoul 130650, South Korea
[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
关键词
strontium titanate; varistor; grain boundary potential barrier; donor concentration; microelectrode;
D O I
10.1016/S0921-5107(98)00451-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of MnO addition on the microstructure and electrical properties of Nb-doped SrTiO3 varistors was investigated by using scanning electron microscopy, I-V and C-V measurement, complex-capacitance plane analysis, and impedance spectroscopy. It was observed that the grain Size and dielectric constant of the ceramics decreased with increasing MnO content. The non-linearity coefficient defining varistor characteristics increased significantly from 5 to 43 as the MnO content increased from 0 to 0.03 mol%. The addition of MnO brought on changes in the gain boundary electronic states: as the MnO content increased, the potential barrier height and the breakdown voltage increased but the charge carrier concentration decreased. This behavior was explained through the effect of Mn ions substituting for Ti sites. The substitutional defect Mn'(Ti)' (or Mn'(Ti)), formed in both grain boundary region and grain interior, acts as an electron-trap. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:12 / 20
页数:9
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