Mechanisms of threshold voltage drift in nanocrystalline thin-film transistors for active-matrix displays

被引：0
|
作者：
Templier, Francois [1 ]
Oudwan, Maher [1 ]
Sermet, Frederic [1 ]
Demars, Patrick [1 ]
机构：
[1] CEA, LETI MINATEC, Grenoble, France
来源：
2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III | 2008年 / 39卷
关键词：
D O I：
10.1889/1.3069345
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The mechanisms of threshold voltage (V-th) drift in nanocrystalline silicon (nc-Si:H) TFTs have been investigated. Using bias-temperature stress measurements, it is found that the dominant mechanism Of V-th drift is charge trapping in the SiNx gate insulator. This result is confirmed by a study on ambipolar nc-Si:H:TFTs. Comparing with a-Si:H TFTs, this means that the reduction of the voltage shift in nc-Si:H TFTs is the result of an improvement of the semiconductor material.
引用
收藏
页码：1181 / 1184
页数：4
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